Germanium Band Gap Engineering Induced by Tensile Strain for Si-Based Optoelectronic Applications
نویسندگان
چکیده
منابع مشابه
Ge-Photodetectors for Si-Based Optoelectronic Integration
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ژورنال
عنوان ژورنال: Communications in Physics
سال: 2014
ISSN: 0868-3166,0868-3166
DOI: 10.15625/0868-3166/23/4/3207